Relaxation time for ionized impurity scattering in compensated n-type Hg1-xCdxTe near x=0.2

P. Girault; C. Blanchard; P Grosbras; J-F. Barbot

doi:10.1023/A:1018644227660

Journal Articles Journal of Materials Science Year : 1997

Relaxation time for ionized impurity scattering in compensated n-type Hg1-xCdxTe near x=0.2

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P. Girault

Function : Author
PersonId : 182568
IdHAL : patrick-girault

Laboratoire des Sciences de l'Ingénieur pour l'Environnement - UMR 7356

C. Blanchard

Function : Author
PersonId : 759254
ORCID : 0000-0002-3055-1511

Institut Pprime

P Grosbras

Function : Author

Institut Pprime

J-F. Barbot

Function : Author

Institut Pprime

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Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci]

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https://hal-univ-rochelle.archives-ouvertes.fr/hal-02472127

Submitted on : Monday, February 10, 2020-8:38:16 AM

Last modification on : Thursday, May 25, 2023-11:14:04 AM

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hal-02472127 , version 1 (10-02-2020)

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HAL Id : hal-02472127 , version 1
DOI : 10.1023/A:1018644227660

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P. Girault, C. Blanchard, P Grosbras, J-F. Barbot. Relaxation time for ionized impurity scattering in compensated n-type Hg1-xCdxTe near x=0.2. Journal of Materials Science, 1997, 32 (14), pp.3857-3861. ⟨10.1023/A:1018644227660⟩. ⟨hal-02472127⟩

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Relaxation time for ionized impurity scattering in compensated n-type Hg1-xCdxTe near x=0.2

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